plastic high power silicon pnp transistor . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ? dc current gain e h fe = 30 (min) @ i c = 2.0 adc ? bd 808, 810 are complementary with bd 807, 890 ??????????????????????? ??????????????????????? maximum ratings ??????????? ??????????? rating ???? ???? symbol ???? ???? type ????? ????? value ??? ??? unit ??????????? ? ????????? ? ??????????? collectoremitter voltage ???? ? ?? ? ???? v ceo ???? ? ?? ? ???? bd808 bd810 ????? ? ??? ? ????? 60 80 ??? ? ? ? ??? vdc ??????????? ? ????????? ? ??????????? collectorbase voltage ???? ? ?? ? ???? v cbo ???? ? ?? ? ???? bd808 bd810 ????? ? ??? ? ????? 70 80 ??? ? ? ? ??? vdc ??????????? ??????????? emitterbase voltage ???? ???? v ebo ???? ???? ????? ????? 5.0 ??? ??? vdc ??????????? ??????????? collector current ???? ???? i c ???? ???? ????? ????? 10 ??? ??? adc ??????????? ??????????? base current ???? ???? i b ???? ???? ????? ????? 6.0 ??? ??? adc ??????????? ??????????? total device dissipation t c = 25 c derate above 25 c ???? ???? p d ???? ???? ????? ????? 90 720 ??? ??? watts mw/ c ??????????? ? ????????? ? ??????????? operating and storage junction temperature range ???? ? ?? ? ???? t j , t stg ???? ? ?? ? ???? ????? ? ??? ? ????? 55 to +150 ??? ? ? ? ??? c ??????????????????????? ??????????????????????? thermal characteristics ???????????? ???????????? characteristic ????? ????? symbol ?????? ?????? max ??? ??? unit ???????????? ???????????? thermal resistance, junction to case ????? ????? q jc ?????? ?????? 1.39 ??? ??? c/w ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ??????????????? ??????????????? characteristic ????? ????? symbol ?????? ?????? type ???? ???? min ???? ???? max ???? ???? unit ??????????????? ? ????????????? ? ??????????????? collectoremitter sustaining voltage* (i c = 0.1 adc, i b = 0) ????? ? ??? ? ????? bv ceo ?????? ? ???? ? ?????? bd808 bd810 ???? ? ?? ? ???? 60 80 ???? ? ?? ? ???? e e ???? ? ?? ? ???? vdc ??????????????? ? ????????????? ? ? ????????????? ? ??????????????? collector cutoff current (v cb = 70 vdc, i e = 0) (v cb = 80 vdc, i e = 0) ????? ? ??? ? ? ??? ? ????? i cbo ?????? ? ???? ? ? ???? ? ?????? bd808 bd810 ???? ? ?? ? ? ?? ? ???? e e ???? ? ?? ? ? ?? ? ???? 1.0 1.0 ???? ? ?? ? ? ?? ? ???? madc ??????????????? ??????????????? emitter cutoff current (v be = 5.0 vdc, i c = 0) ????? ????? i ebo ?????? ?????? ???? ???? e ???? ???? 2.0 ???? ???? madc ??????????????? ? ????????????? ? ? ????????????? ? ??????????????? dc current gain (i c = 2.0 a, v ce = 2.0 v) (i c = 4.0 a, v ce = 2.0 v) ????? ? ??? ? ? ??? ? ????? h fe ?????? ? ???? ? ? ???? ? ?????? ???? ? ?? ? ? ?? ? ???? 30 15 ???? ? ?? ? ? ?? ? ???? e e ???? ? ?? ? ? ?? ? ???? ??????????????? ??????????????? collectoremitter saturation voltage* (i c = 3.0 adc, i b = 0.3 adc) ????? ????? v ce(sat) ?????? ?????? ???? ???? e ???? ???? 1.1 ???? ???? vdc ??????????????? ? ????????????? ? ??????????????? baseemitter on voltage* (i c = 4.0 adc, v ce = 2.0 vdc) ????? ? ??? ? ????? v be(on) ?????? ? ???? ? ?????? ???? ? ?? ? ???? e ???? ? ?? ? ???? 1.6 ???? ? ?? ? ???? vdc ??????????????? ? ????????????? ? ??????????????? currentgain bandwidth product (i c = 1.0 adc, v ce = 10 vdc, f = 1.0 mhz) ????? ? ??? ? ????? f t ?????? ? ???? ? ?????? ???? ? ?? ? ???? 1.5 ???? ? ?? ? ???? e ???? ? ?? ? ???? mhz *pulse test: pulse width 300 m s, duty cycle 2.0%. preferred devices are on semiconductor recommended choices for future use and best overall value. ? semiconductor components industries, llc, 2001 january, 2001 rev. 8 1 publication order number: bd808/d bd808 bd810 10 ampere power transistors pnp silicon 60, 80 volts 90 watts *on semiconductor preferred device case 221a06 to220ab *
bd808 bd810 http://onsemi.com 2 figure 1. active region dc safe operating area (see note 1) 10 v ce , collector-emitter voltage (volts) 3 1 0.1 3 10 30 100 0.3 i c , collector current (amp) t j = 150 c dc 5 ms 1 1 ms bd810 bd808 .5 ms 1 ms 90 80 0 0 25 50 100 125 150 175 figure 2. powertemperature derating curve t c , case temperature ( c) p d , power dissipation (watts) 75 10 70 60 50 40 30 20 2.0 0.01 i c , collector current (amp) 1.4 0.8 0.6 0 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v o lta g e ( v o lt s) figure 3. aono voltages v be @ v ce = 2.0 v figure 4. current gain i c , collector current (amps) 5.0 100 t j = 150 c - 55 c v ce = 2.0 v h fe , dc current gain 500 300 50 10 25 c 0.05 0.1 0.01 0.5 1.0 10 5.0 1.8 1.6 1.2 1.0 0.4 0.2 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 figure 5. thermal response t, pulse width (ms) 1.0 0.01 0.01 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.02 0.03 r(t), normalized effective transient thermal resistance 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 20 30 50 100 200 300 100 0 500 q jc (t) = r(t) q jc d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.05 0.1 0.02 0.01 single pulse
bd808 bd810 http://onsemi.com 3 note 1: there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 1 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
bd808 bd810 http://onsemi.com 4 package dimensions case 221a06 to220ab issue y notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. style 1: pin 1. base 2. collector 3. emitter 4. collector dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. bd808/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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